"The new high-capacity eUFS enables a flagship smartphone to store approximately 130 4K Ultra HD (3840×2160) video clips of a 10-minute duration", writes the Korean firm.
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Reading into this statement, one might possibly construe that the eUFS solution might appear inside a variant of Samsung's next top-tier handset, the yet to be announced Galaxy S9.
MicroSD storage seems to be the main target with this innovation, as Samsung suggest embedded storage is more stable and and less limiting than current external storage cards used in mobile devices. Samsung's 512GB eUFS is composed of eight stacks of 64-layer 512 gigabit (Gb) V-NAND and a controller, doubling the memory of the 256GB eUFS while maintaining the same size, according to ZDNet. The company says that's about a tenfold increase over a 64GB eUFS, which lets users store about 13 of the equivalently sized videos.
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To maximize the performance and energy efficiency of the new 512GB eUFS, Samsung has introduced a new set of proprietary technologies. The controller chip also helps by speeding up the process that converts logical block addresses to physical blocks.
Performance-wise, you can expect up to 860MB/s and 255MB/s sequential read and write speeds, respectively. That's eight times faster than a typical microSD card. When it comes to random operations, Samsung's 512 GB eUFS offers up to 42,000/40,000 read/write IOPS, similar to the predecessors featuring 48-layer 256 Gb V-NAND ICs. This will improve the speed of storage-intensive tasks such as high-resolution burst photos, file searches, and downloading videos in dual app mode, the company states.
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They 64-layer V-NAND chips should also do well in other embedded devices, which are expected to soon proliferate as 5G networks create possibilities for sophisticated devices in a great many locations. However, if the company starts using this storage module, we may be facing the prospects of losing the microSD card slot.